Chinese translation for "hall mobility"
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- 堆尔迁移率
霍耳迁移率
Related Translations:
mobility: n.1.可动性，活动性，能动性。2.灵活性，可变动性。3.【物理学】动性，迁移率；【化学】淌度；【军事】运动性，机动性。短语和例子the ionic mobility 离子迁移率[淌度]。n.群众。 mobility and nobility 〔戏谑语〕老百姓和贵族。
- Example Sentences:
| 1. | Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient
非本征半导体单晶霍尔迁移率和霍尔系数测量方法 | | 2. | Test methods for measuring resistivity and hall coefficient and determining hall mobility in single - crystal semiconductors
测量单晶半导体的电阻率霍尔系数及霍尔迁移率的试验方法 | | 3. | Here the conductance , carrier concentration and hall mobility ect parameters of er doped cdte films have been given . using seto model , we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance
讨论了不同er离子注入量对硅基底上沉积的cdte薄膜结构和光电性能的影响,并具体给出了掺杂cdte多晶薄膜的电导、载流子浓度及迁移率等参数值。 | | 4. | The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。 | | 5. | The n type carrier was provided by interstitial zn atom , and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility . when zno thin film was annealed in the ar ambience , p conduction type was founded in the zno thin film which grew in oxygen enrichment condition . this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ) , and p type carrier was from oi
在ar气保护下,对富氧条件下生长的zno薄膜的退火后的霍尔测量中发现, zno薄膜呈现p型导电状态,分析认为,这可能是由于富氧状态下生长的zno薄膜中过量的o在ar气保护下退火没有逸出薄膜,反而进入了zno薄膜的间隙位置,成为正电中心,使zno薄膜呈现p型导电。 | | 6. | Pure cdte films have high electrical resistivity and are slightly p - type , due to the formation of cd vacancies in the cdte lattice acting as acceptor centers . the sheet resistivity of films are about 1010 ? / ? . the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v . s . the structural and electrical properties of cdte films doped te are markedly different from pure cdte films
，面载流子浓度约105 - 6 / cm2 ，载流子迁移率为几百cm2 / v . s ；掺杂te元素后，薄膜衍射峰强增大，薄膜结构上出现了第二种相成分?六方结构的te ，由衍射峰强判断该相比例较小，同时cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常数增大。 |
- Similar Words：
- "hall land" Chinese translation, "hall landing" Chinese translation, "hall lantern" Chinese translation, "hall manager" Chinese translation, "hall mark" Chinese translation, "hall multiplier" Chinese translation, "hall nave" Chinese translation, "hall noise" Chinese translation, "hall occupational orientation inventory" Chinese translation, "hall of ambassador" Chinese translation
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